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SRFET
AOL1702 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1702L is Pb-free (meets ROHS & Sony 259 specifications). AOL1702L is a Green Product ordering option. AOL1702 and AOL1702L are electrically identical.
Features
VDS (V) = 30V ID =70A (VGS = 10V) RDS(ON) < 5.8m (VGS = 10V) RDS(ON) < 7.2m (VGS = 4.5V)
UIS Tested Rg,Ciss,Coss,Crss Tested
D
Ultra SO-8
TM
Top View D
Fits SOIC8 footprint !
S
Bottom tab connected to drain G
SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain CurrentA Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25C Power Dissipation Power Dissipation
B C
Maximum 30 12 70 52 100 21 17 30 135 58 29 5 3.2 -55 to 175
Units V V A
TC=25C
G
TC=100C TA=25C TA=70C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W C
TC=100C TA=25C TA=70C
A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient D Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 20 50 2.1
Max 25 60 2.6
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250uA, VGS=0V VDS=24V, VGS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current TJ=125C 1.5 100 4.8 7.2 5.9 110 0.37 0.5 55 4000 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 520 217 0.6 59 VGS=10V, VDS=15V, ID=20A 27 12 11 9 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=300A/s
2
Min 30
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
0.1 20 0.1 1.85 2.4 5.8 9.0 7.2
mA A V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
5000
0.9 77
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
nC nC nC ns ns ns ns ns nC
9 37 8 16 22
Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/s
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev0:Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 4.5V 80 60 40 10 20 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 7 Normalized On-Resistance VGS=4.5V 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 15 ID=20A 12 RDS(ON) (m) IS (A) 1.0E+02 1.0E+01 1.0E+00 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 3 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=20A VGS=10V VGS=3V 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 10V ID(A) 3.5V 30 25 20 15 125 25C VDS=5V
ID (A) 6 RDS(ON) (m) 5
4
VGS=10V
3
9 25C
6
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics Vds=15V ID=20A 7000 6000 Capacitance (pF) 5000 4000 3000 2000 1000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss Ciss
1000 100 ID (Amps) 10 1 0.1 0.01 0.01 RDS(ON) limited DC TJ(Max)=175C TC=25C
120 10s 0.1ms 1ms 10ms Power (W) 100 TJ(Max)=175C TC=25C
80
60
1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.1
100
40 0.01
0.1
1
10
100
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
10 ZJC Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 Single Pulse 0.01 0.00001 0.0001 0.001
D=Ton/T TJ,PK=TC+PD.ZJC.RJC RJC=2.6C/W 0.01 0.1
PD Ton T 10 100
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160 ID(A), Peak Avalanche Current Power Dissipation (W) 0.001 80
120 TA=25C 80 TA=150C 40
60
40
20
0 0.000001
0 0.00001 0.0001 0 25 50 75 100 125 150 175 T CASE (C) Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
80
100 80 Power (W) 60 40 20 TJ(Max)=150C TA=25C
Current rating ID(A)
60
40
20
0 0 25 50 75 100 125 150 175 T CASE (C) Figure 14: Current De-rating (Note B)
0 0.01
1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.1
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001 0.0001 0.001
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 1.0E-02 VDS=24V IR (A) VDS=12V VSD(V) 1.0E-03 1.0E-04 1.0E-05 1.0E-06 100 150 200 Temperature (C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 60 50 40 Qrr (nC) 30 20 10 0 0 5 10 15 20 25 30 Is (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 50 45 40 35 Qrr (nC) 30 25 20 15 10 5 0 0 200 400 600 800 1000 Irm 0 1200 Qrr 125 25C 25C Is=20A 125C 12 9 6 3 15 27 24 21 18 25C 25C 125C Is=20A 2 1.5 1 0.5 Irm 25C di/dt=1000A/us 125C 18 15 12 Irm (A) 9 6 3 0 3 0 0 5 10 15 20 25 30 Is (A) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 2.5 S 125C 0 trr (ns) 15 di/dt=1000A/us 12 9 6 25C 0.5 125C 25C 2 1.5 1 0 50 0.6 0.4 0.2 0 0 100 150 200 Temperature (C) Figure 18: Diode Forward voltage vs. Junction Temperature 2.5 50 1 0.8 20A 10A 5A
IS=1A
25C
trr
Qrr
125C
Irm (A)
trr (ns)
15 12 9 6 3 0 0 125C trr S
di/dt (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt
0 600 800 1000 1200 di/dt (A) Figure 22: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt 200 400
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
S

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